power transistors 1 publication date: september 2003 sjd00255bed 2SD2222 silicon npn triple diffusion planar type darlington for power amplification complementary to 2sb1470 features ? optimum for 120 w hi-fi output ? high forward current transfer ratio h fe ? low collector-emitter saturation voltage v ce(sat) absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c unit: mm 1: base 2: collector 3: emitter top-3l-a1 package parameter symbol rating unit collector-base voltage (emitter open) v cbo 160 v collector-emitter voltage (base open) v ceo 160 v emitter-base voltage (collector open) v ebo 5v collector current i c 8a peak collector current i cp 15 a collector power p c 150 w dissipation t a = 25 c 3.5 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-emitter voltage (base open) v ceo i c = 30 ma, i b = 0 160 v collector-base cutoff current (emitter open) i cbo v cb = 160 v, i e = 0 100 a collector-emitter cutoff current (base open) i ceo v ce = 160 v, i b = 0 100 a emitter-base cutoff current (collector open) i ebo v eb = 5 v, i c = 0 100 a forward current transfer ratio h fe1 v ce = 5 v, i c = 1 a 1 000 ? h fe2 * v ce = 5 v, i c = 7 a 3 500 20 000 collector-emitter saturation voltage v ce(sat) i c = 7 a, i b = 7 ma 3.0 v base-emitter saturation voltage v be(sat) i c = 7 a, i b = 7 ma 3.0 v transition frequency f t v ce = 10 v, i c = 0.5 a, f = 1 mhz 20 mhz turn-on time t on i c = 7 a, i b1 = 7 ma, i b2 = ? 7 ma, 2.0 s storage time t stg v cc = 50 v 6.0 s fall time t f 1.2 s 20.0 0.5 2.0 0.3 3.0 0.3 1.0 0.2 5.45 0.3 10.9 0.5 123 26.0 0.5 (10.0) (2.5) solder dip (6.0) (4.0) (2.0) (1.5) (1.5) 20.0 0.5 5.0 0.3 3.3 0.2 (1.5) 2.7 0.3 0.6 0.2 (3.0) (3.0) (2.0) note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification rank q s p h fe2 3 500 to 10 000 5 000 to 15 000 7 000 to 20 000 internal connection b c e
2SD2222 2 sjd00255bed v be(sat) ? i c h fe ? i c c ob ? v cb p c ? t a i c ? v ce v ce(sat) ? i c t on , t stg , t f ? i c safe operation area 0 160 40 120 80 0 40 80 120 160 200 collector power dissipation p c (w) ambient temperature t a ( c) (1)t c =ta (2)with a 100 100 2mm al heat sink (3)without heat sink (p c =3.5w) (1) (2) (3) 016 412 8 0 2 4 6 10 8 collector current i c (a) collector-emitter voltage v ce (v) i b =1.0ma t c =25?c 0.9ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.01 0.1 0.1 1 10 100 1 10 100 collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) i c /i b =1000 t c =?25?c 25?c 125?c 0.01 0.1 0.1 1 10 100 1 10 100 base-emitter saturation voltage v be(sat) (v) collector current i c (a) i c /i b =1000 t c =?25?c 25?c 125?c 10 10 2 10 3 10 4 10 5 0.1 1 10 forward current transfer ratio h fe collector current i c (a) v ce =5v 25?c ?25?c t c =125?c 0.1 1 10 100 1 10 10 2 10 3 10 4 collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) i e =0 f=1mhz t c =25?c 0.01 0.1 1 10 100 012 210 48 6 turn-on time t on , storage time t stg , fall time t f ( s ) collector current i c (a) pulsed t w =1ms duty cycle=1% i c /i b =1000(? b1 =i b2 ) v cc =50v t c =25?c t stg t f t on 0.01 1 0.1 1 10 100 10 100 1 000 collector current i c (a) collector-emitter voltage v ce (v) t=10ms t=1ms dc i cp i c non repetitive pulse t c =25?c
2SD2222 3 sjd00255bed r th ? t 10 ? 1 1 10 10 4 10 2 10 3 10 3 10 4 10 2 10 1 10 ? 1 10 ? 3 10 ? 2 10 ? 4 time t (s) thermal resistance r th ( c/w) (1) (2) (1)p t =10v 0.3a(3w) and without heat sink (2)p t =10v 1.0a(10w) and with a 100 100 2mm al heat sink
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